It is with great sadness we must report that Prof. Leonid A. Aleksandrov died on May 29th. L.Aleksandrov was strong and active up until April 1999, when cancerwas diagnosed and surgery was unsuccesful. His health went from bad to worse very quickly and he died after one month of illness. L.Aleksanrov was born 27 September 1923 in Dnepropetrovsk (Ukraine), where he graduated from University in 1950. Then he was a lecturer at Teachers Training Institute (Artemovsk,). He got a chair of Physics in Yoshkar-Ola Teachers Training Institute in 1953 and Candidate of Science degree in 1954. From 1958 he was chair of Physics in Saransk University, where hereceived Doctor of Science degree (1964) and position of Professor in Solid State Physics (1965). Since 1965 L.Aleksandrov worked in Novosibirsk, Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences.
He was the author of more than 300 publications on phase and solid state structure transformationsand on thinfilm preparation, characterization and applications. he was a member of the Microelectronic International Scientific Committee,an active participant in the International Union for Vacuum Science, Technique and Applications (IUVSTA),a member of the editorial board of several journals: "Thin Solid Films", "Physica Status Solidi" and "Crystal Research Technology"and a member of many International Conference Organizing and Program Committees.
He is the author of the books: "The Kinetic of Solid Layers Formation and Structure" (Novosibirsk, 1972), "The Transition Region in Epitaxial Semiconductor Films" (Novosibirsk, 1979), Internal Friction and Defects in Semiconductors" (Novosibirsk, 1979), "Multilayer films Structure for Light Sources" (Novosibirsk, 1981), "Kinetic of Crystallisation", (Novosibirsk, 1985).
Prof. L.Aleksandrov was a giant as a scientist, as a member of the Institute of Semiconductor Physics, and as a colleague and friend. His professionalism, dignity and compassion have touched and changed many lives. He is missed and will continue to be.
Vytas A. GRAZHULIS
Professor Vitas A. Grazhulis was born on 25 May 1942 in Varena, Lithuania. He graduated from the Moscow Energy University in 1965 and since then worked at the Institute of Solid State Physics of the Russian Academy of Sciences.
Professor Grazhulis discovered the one-dimensional spin chains in the dislocation cores in silicon and studies their properties. He also discovered the dislocation- induced recombination instability, and double electron-nuclear resonance. The results he obtained created a new direction related to the study of dislocation spin chains.
Vytas Grazhulis was the first to discover and study the previously unknown superstructures on the surfaces of high-temperature superconductors. His pioneering works on low temperature ultra-high vacuum spectroscopy techniques gained him world-wide acceptance as one of the leading scientists in the field; in particular, the cryovacuum pumps were designed which allowed the attainment of extremely high vacuum.
Professor Grazhulis was a member of the Editorial Board of the Russian national journal "Poverkhnost (Surface)", and in 1994 he founded the international journal "Physics of Low-Dimensional Structures". He was the Chairman of the Scientific Council "Surface Physics" of the Russian Academy of Sciences and was the Head of the Russian National Program "Surface Atomic Structures", and represented Russia in the International Union for Vacuum Science, Technique and Applications (IUVSTA).
Professor Grazhulis was a great scientist and official, who has contributed so much to surface science and national physical science. He will be greatly missed by a wide range of people whose common bond was their friendship and personal contacts with this wonderfully humane man.
Vladimir V. Rumyantsev.
Ministry of Science, Russia.